general purpose transistors npn silicon these transistors are designed for general purpose amplifier applications. they are housed in the sotC323/scC70 package which is designed for low power surface mount applications. 2 emitter 3 collector 1 base maximum ratings rating symbol value unit collectorCemitter voltage v ceo 40 vdc collectorCbase voltage v cbo 75 vdc emitterCbase voltage v ebo 6.0 vdc collector current continuous i c 600 madc thermal characteristics characteristic symbol max unit total device dissipation frC 5 board, p d 150 mw t a = 25c thermal resistance junction to ambient r ja 833 c/w junction and storage temperature t j , t stg C55 to +150 c device marking m mbt2222awt1 = p1 electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collectorCemitter breakdown voltage (1) v (br)ceo 40 vdc (i c = 1.0 madc, i b = 0) collectorCbase breakdown voltage v (br)cbo 75 vdc (i c = 10 adc, i e = 0) emitterCbase breakdown voltage v (br)ebo 6.0 vdc (i e = 10 adc, i c = 0) base cutoff current i bl 20 nadc (v ce = 60 vdc, v eb = 3.0 vdc) collector cutoff current i cex 10 nadc (v ce = 60 vdc, v eb = 3.0 vdc) 1. pulse test: pulse width < 300 s, duty cycle < 2.0%. sotC323 compliance with rohs requirements. we declare that the material of product 2012-11 willas electronic corp. mm bt2222awt1 preliminary
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (1) dc current gain (1) h fe CC (i c = 0.1 madc, v ce = 10 vdc) 35 CC (i c = 1.0 madc, v ce = 10 vdc) 50 CC (i c = 10 madc, v ce = 10 vdc) 75 CC (i c = 150 madc, v ce = 10 vdc) 100 (i c = 500 madc, v ce = 10 vdc) 40 CC collectorCemitter saturation voltage(1) v ce(sat) vdc (i c = 150 madc, i b = 15 madc) CC 0.3 (i c = 500 madc, i b = 50 madc) CC 1.0 baseCemitter saturation voltage(1) v be(sat) vdc (i c = 150 madc, i b = 15 madc) 0.6 1.2 (i c = 500 madc, i b = 50 madc) CC 2.0 smallCsignal characteristics currentCgain bandwidth product f t 300 CC mhz (i c = 20 madc, v ce = 20vdc, f = 100 mhz) output capacitance c obo CC 8.0 pf (v cb = 10 vdc, i e = 0, f = 1.0 mhz) input capacitance c ibo CC 30 pf (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) input impedance h ie 0.25 1.25 k ? (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) voltage feedback ratio h re CC 4.0 x 10 C4 (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) smallCsignal current gain h fe 75 375 (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) output admittance h oe 25 200 mhos (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) noise figure nf CC 4.0 db (v ce = 10 vdc, i c = 100 adc, r s = 1.0 k ?, f = 1.0 khz) switching characteristics delay time (v cc = 3.0 vdc, v be = C 0.5 vdc t d 10 rise time i c = 150 madc, i b1 = 15 madc) t r 25 ns storage time (v cc = 30 vdc, i c = 150 madc t s 225 ns fall time i b1 = i b2 = 15 madc) t f 60 1. pulse test: pulse width < 300 s, duty cycle < 2.0%. ordering information device marking shipping m mbt2222awt1 p1 3000/tape&reel 2012-11 willas electronic corp. general purpose transistors mm bt2222awt1 preliminary
sot?323 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 soldering footprint* 2012-11 willas electronic corp. general purpose transistors mm bt2222awt1 dimensions in inches and (millimeters) .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)max. .087(2.20) .070(1.80) .054(1.35) .045(1.15) preliminary
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